 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| Schottky Barrier Diodes (SBD) MA3XD14E Silicon epitaxial planar type (cathode common) Unit : mm For high-speed switching circuits I Features * Mini type 3-pin package * Low forward rise voltage VF (VF < 0.4 V) * Cathode common type 2.9 - 0.05 + 0.2 2.8 - 0.3 0.65 0.15 1.5 - 0.05 + 0.25 + 0.2 0.65 0.15 0.95 1.9 0.2 1 3 2 0.95 1.45 I Absolute Maximum Ratings Ta = 25C Parameter Reverse voltage (DC) Repetitive peak reverse voltage Non-repetitive peak forward surge current*2 Forward current (DC) Peak forward current Single Double*1 Single Double*1 Tj Tstg IFM Symbol VR VRRM IFSM IF Rating 20 20 1 100 70 300 200 125 -55 to +125 C C 1 mA Unit 0.8 V V A mA 1 : Anode 1 2 : Anode 2 3 : Cathode 1 Cathode 2 Mini Type Package (3-pin) Marking Symbol: M5H Internal Connection Junction temperature Storage temperature Note) *1 : The value for operating one chip *2 : The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive) 0 to 0.1 0.1 to 0.3 0.4 0.2 1.1 - 0.1 3 2 I Electrical Characteristics Ta = 25C 3C Parameter Reverse current (DC) Forward voltage (DC) Symbol IR VF1 VF2 Terminal capacitance Reverse recovery time* Ct trr VR = 10 V IF = 5 mA IF = 100 mA VR = 0 V, f = 1 MHz IF = IR = 100 mA Irr = 10 mA, RL = 100 25 3.0 Conditions Min Typ Max 20 0.27 0.40 Unit A V V pF ns Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 2. Rated input/output frequency: 250 MHz 3. * : trr measuring circuit Bias Application Unit N-50BU tr 10% Input Pulse tp t IF trr t Irr = 10 mA IF = 100 mA IR = 100 mA RL = 100 Output Pulse A VR Pulse Generator (PG-10N) Rs = 50 W.F.Analyzer (SAS-8130) Ri = 50 90% tp = 2 s tr = 0.35 ns = 0.05 0.16 - 0.06 + 0.2 + 0.1 0.4 - 0.05 + 0.1 1 MA3XD14E IF V F 1 10-1 Ta = 125C Schottky Barrier Diodes (SBD) IR V R 10-1 10-2 Forward current IF (A) 10-2 75C 25C 10-4 20C Reverse current IR (A) Ta = 125C 10-3 75C 10-3 10-4 10-5 10-5 25C 10-6 0 0.1 0.2 0.3 0.4 0.5 0.6 10-6 0 5 10 15 20 25 30 Forward voltage VF (V) Reverse voltage VR (V) 2 |
Price & Availability of MA3XD14E
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |